High-Performance and Low-Voltage Sense-Amplifier Techniques for sub-90nm SRAM
نویسندگان
چکیده
Large bit-line capacitance is one of the main bottlenecks to the performance of on-chip caches. New sense amplifier techniques need to explicitly address this challenge. This paper describes two sensing techniques to overcome this problem: a current sense amplifier (CSA) and a charge transfer sense amplifier (CTSA) and their implementation based on 90nm CMOS technology. The current sense amplifier senses the cell current directly and shows a speed improvement of 17-20% for 128 memory cells as compared to the conventional voltage mode sense amplifier, for same energy. The other is a charge transfer sense amplifier that takes advantage of large bit-line capacitance for its operation. CTSA shows an improvement of 18-22% for read delay for 128 memory cells and consumes 15-18% less energy than the voltage mode sense amplifier. CTSA results in reduced bit-line swing and which in turn leads to 30% lower bit-line energy than the conventional voltage mode.
منابع مشابه
Ultra Low-Power Fault-Tolerant SRAM Design in 90nm CMOS Technology
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